A-RAM

A-RAM (Advanced-Random Access Memory) is a type of DRAM memory based on cells of a single transistor. This technology has been invented at the University of Granada (Spain) in collaboration with the National Center for Scientific Research, CNRS (France).

A-RAM memory, unlike conventional DRAMs, does not require any extrinsic information storage element (storage capacitor). Each bit is stored in a specially designed transistor. As semiconductor circuit technology evolves to nodes below 45nm [1], conventional non-volatile DRAM storage technology is expected to find very limited scaling capability. Alternatively new memory concepts based on the floating body effects of silicon-on-insulator transistors have been proposed. These memories known as single-transistor memories (1T-DRAM) include A-RAM, TT-RAM and Z-RAM technologies. [2]

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